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High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder

K Navi1*, M Rashtian2, A Khatir2, P Keshavarzian2 and O Hashemipour1

Author Affiliations

1 Shahid Beheshti University, GC, Tehran, Iran

2 Science and Research Branch of Islamic Azad University, Tehran, Iran

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Nanoscale Research Letters 2010, 5:859-862  doi:10.1007/s11671-010-9575-4

Published: 18 March 2010


Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.

Full Adder; Carbon nanotube; Carbon nanotube field effect transistor; High speed; High performance