High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder
1 Shahid Beheshti University, GC, Tehran, Iran
2 Science and Research Branch of Islamic Azad University, Tehran, Iran
Nanoscale Research Letters 2010, 5:859-862 doi:10.1007/s11671-010-9575-4Published: 18 March 2010
Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.