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Study on Growth Kinetics of CdSe Nanocrystals with a New Model

Huaipeng Su1, JohnDavid Dixon2, Andrew Y Wang2, Jeremy Low3, Jian Xu3 and Jingkang Wang1*

Author Affiliations

1 State Key Laboratory of Chemical Engineering, School of Chemical Engineering and Technology, Tianjin University, 300072, Tianjin, Peoples’ Republic of China

2 Ocean NanoTech LLC, 2143 Worth Lane, Springdale, AR, 72764, USA

3 Department of Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA

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Nanoscale Research Letters 2010, 5:823-828  doi:10.1007/s11671-010-9568-3

Published: 25 March 2010


A model which involves both bulk diffusion process and surface reaction process has been developed for describing the growth behaviour of nanoparticles. When the model is employed, hypothesising that either of the processes alone dominates the overall growth process is unnecessary. Conversely, the relative magnitude of contributions from both processes could be obtained from the model. Using this model in our system, the growth process of CdSe QDs demonstrated two different growth stages. During the first stage, the growth of CdSe QDs was dominated by bulk diffusion, whereas, neither the bulk diffusion process nor the surface reaction process could be neglected during the later stage. At last, we successfully modelled the Ostwald ripening of CdSe QDs with LSW theories.

Growth kinetics; Semiconductor nanocrystals; Model; CdSe; Ostwald ripening