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Residual Stress Relaxation Induced by Mass Transport Through Interface of the Pd/SrTiO3

S Nazarpour12*, F Afshar12, C Zamani12, N Moghimian12 and A Cirera12

Author Affiliations

1 MIND-IN2UB, Department of Electronics, Universitat de Barcelona, Barcelona, 08028, Spain

2 UB, Department of Electronics, Universitat de Barcelona, Barcelona, 08028, Spain

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Nanoscale Research Letters 2010, 5:709-713  doi:10.1007/s11671-010-9535-z

Published: 20 January 2010


Metal interconnections having a small cross-section and short length can be subjected to very large mass transport due to the passing of high current densities. As a result, nonlinear diffusion and electromigration effects which may result in device failure and electrical instabilities may be manifested. Various thicknesses of Pd were deposited over SrTiO3 substrate. Residual stress of the deposited film was evaluated by measuring the variation of d-spacing versus sin2ψ through conventional X-ray diffraction method. It has been found that the lattice misfit within film and substrate might be relaxed because of mass transport. Besides, the relation between residual intrinsic stress and oxygen diffusion through deposited film has been expressed. Consequently, appearance of oxide intermediate layer may adjust interfacial characteristics and suppress electrical conductivity by increasing electron scattering through metallic films.

Mass transport; Residual stress; Interfacial properties; Relaxation process