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Ionic Transport Properties in Nanocrystalline Ce0.8A0.2O2-δ (with A = Eu, Gd, Dy, and Ho) Materials

Ashok Kumar Baral* and V Sankaranarayanan

Author affiliations

Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India

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Citation and License

Nanoscale Research Letters 2010, 5:637-643  doi:10.1007/s11671-010-9527-z

Published: 30 January 2010

Abstract

The ionic transport properties of nanocrystalline 20 mol% Eu, Gd, Dy, and Ho doped cerias, with average grain size of around 14 nm were studied by correlating electrical, dielectric properties, and various dynamic parameters. Gd-doped nanocrystalline ceria shows higher value of conductivity (i.e., 1.8 × 10−4 S cm−1 at 550°C) and a lower value of association energy of oxygen vacancies with trivalent dopants Gd3+ (i.e., 0.1 eV), compared to others. Mainly the lattice parameters and dielectric constants (ε) are found to control the association energy of oxygen vacancies in these nanomaterials, which in turn resulted in the presence of grain and grain boundary conductivity in Gd- and Eu-doped cerias and only significant grain interior conductivity in Dy- and Ho-doped cerias.

Keywords:
Nanostructures; Electrical transport; Dielectric relaxations; Association energy