Figure 2.

a AFM image of an AlGaAs surface after Al LDE at T1 = T2 = 620°,t1 = 6 s, t2 = 180 s, and F = 0.47 ML/s. b Distribution of the hole depth dH. c Profiles of the shallow hole marked by arrow “B” in Fig. 2a along [110] and [−110] azimuth. d Profiles of the deep hole marked by arrow “A” in Fig. 2a and of a typical deep hole after filling with dF = 0.57 nm GaAs

Heyn et al. Nanoscale Research Letters 2009 5:576-580   doi:10.1007/s11671-009-9507-3