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Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

Ch Heyn*, A Stemmann, T Köppen, Ch Strelow, T Kipp, M Grave, S Mendach and W Hansen

Author Affiliations

Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Jungiusstraße 11, 20355, Hamburg, Germany

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Nanoscale Research Letters 2009, 5:576-580  doi:10.1007/s11671-009-9507-3

Published: 25 December 2009


Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.

Quantum dots; Molecular beam epitaxy; Droplet etching; Photoluminescence; Atomic force microscopy