Figure 2.

Fabrication steps for a mold having two pattern levels for imprint damascene process. a e-beam exposure; b develop the top and bottom resist layers; c Cr evaporation and liftoff by dissolving the top resist layer; d RIE etch bottom resist layer and SiO2; e liftoff Cr by dissolving the bottom resist layer; f RIE SiO2 and remove Cr

Saydur Rahman and Cui Nanoscale Research Letters 2010 5:545-549   doi:10.1007/s11671-010-9540-2