Modeling Electrolytically Top-Gated Graphene
Department of Applied Mathematics, University of Waterloo, Waterloo, ON, N2L 3G1, Canada
Nanoscale Research Letters 2010, 5:505-511 doi:10.1007/s11671-009-9515-3Published: 7 January 2010
We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomenon is modeled using a modified Poisson–Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the sensitivity of graphene’s doping levels to the salt concentration and the importance of quantum capacitance that arises due to the smallness of the Debye screening length in the electrolyte.