Table 1 |
||
| Simulation parameters | ||
| Parameter | Value | Unit |
| Ion concentration | 1 | mM |
| Substrate doping | 3 × 1016 | cm−3 |
| Diffusion doping | 1019 | cm−3 |
| Temperature | 300 | K |
| Device length | 400 | nm |
| Device width | 1,000 | nm |
| Base pairs | 30 | – |
| DNA spacings | 20 | nm |
| Insulator thickness | 18 | nm |
Shinwari et al. Nanoscale Research Letters 2010 5:494 doi:10.1186/1556-276X-5-494
