Table 1

Simulation parameters
Parameter Value Unit
Ion concentration 1 mM
Substrate doping 3 × 1016 cm−3
Diffusion doping 1019 cm−3
Temperature 300 K
Device length 400 nm
Device width 1,000 nm
Base pairs 30
DNA spacings 20 nm
Insulator thickness 18 nm

Shinwari et al.

Shinwari et al. Nanoscale Research Letters 2010 5:494-500   doi:10.1007/s11671-009-9522-4

Open Data