|Left, LDA calculated bandgaps (LMTO , Spin–Orbit effects included) for Γ, XL points for GaAs and Ge Right, QSGW bandgaps for the same points in Ge and GaAs (eV, 0 K), compared with measured values at 0 K. The self-energy was scaled by a factor 0.8, as described in the text. Raw (unscaled) QSGW levels are slightly larger than experiment|
|LDA BANDGAP (eV)||QSGWBANDGAP (eV)|
a Inferred from ellipsometry data in Ref. , using the QSGW Γ-X dispersion in the valence band (−3.37 eV)
b Inferred from ellipsometry data in Ref. , using the QSGW Γ-X dispersion in the valence band (−3.98 eV)
Giorgi et al.
Giorgi et al. Nanoscale Research Letters 2010 5:469-477 doi:10.1007/s11671-009-9516-2