On the Chemical Origin of the Gap Bowing in (GaAs)1−xGe2x Alloys: A Combined DFT–QSGW Study
1 Department of Chemical System Engineering, School of Engineering, University of Tokyo, Tokyo, 113-8656, Japan
2 Arizona State University, Tempe, AZ, 85287, USA
Nanoscale Research Letters 2010, 5:469-477 doi:10.1007/s11671-009-9516-2Published: 7 January 2010
Motivated by the research and analysis of new materials for photovoltaics and by the possibility of tailoring their optical properties for improved solar energy conversion, we have focused our attention on the (GaAs)1−xGe2x series of alloys. We have investigated the structural properties of some (GaAs)1−xGe2x compounds within the local-density approximation to density-functional theory, and their optical properties within the Quasiparticle Self-consistent GW approximation. The QSGW results confirm the experimental evidence of asymmetric bandgap bowing. It is explained in terms of violations of the octet rule, as well as in terms of the order–disorder phase transition.