Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
1 Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103, St.-Petersburg, Russia
2 St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021, St.-Petersburg, Russia
3 Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia
4 Max Planck Institute for Microstructure Physics, Weinberg 2, 06120, Halle/Saale, Germany
Nanoscale Research Letters 2009, 5:360-363 doi:10.1007/s11671-009-9488-2Published: 14 November 2009
We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.