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Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

GE Cirlin123*, AD Bouravleuv23, IP Soshnikov23, Yu B Samsonenko123, VG Dubrovskii23, EM Arakcheeva3, EM Tanklevskaya3 and P Werner4

Author Affiliations

1 Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103, St.-Petersburg, Russia

2 St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021, St.-Petersburg, Russia

3 Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia

4 Max Planck Institute for Microstructure Physics, Weinberg 2, 06120, Halle/Saale, Germany

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Nanoscale Research Letters 2009, 5:360-363  doi:10.1007/s11671-009-9488-2

Published: 14 November 2009


We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.

Molecular beam epitaxy; Nanowires; GaAs; Solar cells; Photovoltaic properties