Figure 2.

Emission rate signatures of each defect state; a Illustration of the bias dependence of the emission rates of E1; b Arrhenius plots obtained from the thermal emission rates at different junction fields; c Activation energy of trap E1 as a function of applied electric field

Shafi et al. Nanoscale Research Letters 2010 5:1948-1951   doi:10.1007/s11671-010-9820-x