Figure 1.
a DLTS spectra of GaAs/AlGaAs multi-quantum well structures grown on (100) and (311)B
GaAs substrates. The inset shows the peaks resolved by Laplace DLTS technique; b Activation energies of defect states EB1 and EB2 in (311)B samples as determined
from the Arrhenius plots
Shafi et al. Nanoscale Research Letters 2010 5:1948 doi:10.1007/s11671-010-9820-x |
