Figure 1.

a DLTS spectra of GaAs/AlGaAs multi-quantum well structures grown on (100) and (311)B GaAs substrates. The inset shows the peaks resolved by Laplace DLTS technique; b Activation energies of defect states EB1 and EB2 in (311)B samples as determined from the Arrhenius plots

Shafi et al. Nanoscale Research Letters 2010 5:1948-1951   doi:10.1007/s11671-010-9820-x