Table 2
Results obtained in the Si/SiO2/Si SOI heterostructure from the positron lineshape profile (Fig. 1) using VEPFIT
	L+ (nm)	t (nm)	S parameter
Surface	<1	~2F	0.508 ± 0.003
Si	220F	2F	0.551F
SiO2	17 ± 4	149 ± 3	0.541 ± 0.002
SiO2/Si interface	~1F	~1F	0.525 ± 0.004
Si	220 ± 20	∞	0.551 ± 0.001

Positron diffusion length L₊, thickness t, and Doppler S parameter. Fixed parameters are marked with the letter F

Ferragut et al. Nanoscale Research Letters 2010 5:1942   doi:10.1186/1556-276X-5-1942