Table 1

Characteristics of the samples used in current measurements
Sample Structurea Thermal treatment
SOI 2 Si/147 SiO2/Si As-received
SiGe (a) 50 Si0.64Ge0.36/10 Si/147 SiO2/Si As-grown
SiGe (b) 50 Si0.64Ge0.36/10 Si/147 SiO2/Si 33 min at 750°C

aThicknesses are given in nanometers. All samples were covered by a thin layer of natural oxide (~2 nm)

Ferragut et al.

Ferragut et al. Nanoscale Research Letters 2010 5:1942-1947   doi:10.1007/s11671-010-9818-4

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