Table 1 |
||
| Characteristics of the samples used in current measurements | ||
| Sample | Structurea | Thermal treatment |
| SOI | 2 Si/147 SiO2/Si | As-received |
| SiGe (a) | 50 Si0.64Ge0.36/10 Si/147 SiO2/Si | As-grown |
| SiGe (b) | 50 Si0.64Ge0.36/10 Si/147 SiO2/Si | 33 min at 750°C |
aThicknesses are given in nanometers. All samples were covered by a thin layer of natural oxide (~2 nm)
Ferragut et al. Nanoscale Research Letters 2010 5:1942 doi:10.1186/1556-276X-5-1942
