Figure 4.

Ratios of the positron–electron momentum distribution of the annihilating pair in SiGe a “as grown” (full symbols) and SiGe b annealed (open symbols) relative to bulk Si. Linear combination fits for a “as grow” (short dashed line) and b annealed (dot-dashed line). The reference spectra of defected Ge and surface/interface are shown with continue and dashed lines (after Ref. [2])

Ferragut et al. Nanoscale Research Letters 2010 5:1942-1947   doi:10.1007/s11671-010-9818-4