Figure 3.

S parameter as a function of the mean implantation depth: SiGe a “as grown” (full symbols); SiGe b annealed (open symbols). Continuous and dashes lines are VEPFIT simulations, while vertical dashed lines mark the position of interfaces (after Ref. [2])

Ferragut et al. Nanoscale Research Letters 2010 5:1942-1947   doi:10.1007/s11671-010-9818-4