In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy

B Sanduijav1, DG Matei12 and G Springholz1*

Author Affiliations

1 Institut für Halbleiterphysik, Johannes Kepler University, 4040, Linz, Austria

2 University of Bielefeld, 33501, Bielefeld, Germany

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Nanoscale Research Letters 2010, 5:1935-1941  doi:10.1007/s11671-010-9814-8

Published: 6 October 2010


Si and Ge growth on the stripe-patterned Si (001) substrates is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). During Si buffer growth, the evolution of RHEED patterns reveals a rapid change of the stripe morphology from a multifaceted “U” to a single-faceted “V” geometry with {119} sidewall facets. This allows to control the pattern morphology and to stop Si buffer growth once a well-defined stripe geometry is formed. Subsequent Ge growth on “V”-shaped stripes was performed at two different temperatures of 520 and 600°C. At low temperature of 520°C, pronounced sidewall ripples are formed at a critical coverage of 4.1 monolayers as revealed by the appearance of splitted diffraction streaks in RHEED. At 600°C, the ripple onset is shifted toward higher coverages, and at 5.2 monolayers dome islands are formed at the bottom of the stripes. These observations are in excellent agreement with STM images recorded at different Ge coverages. Therefore, RHEED is an efficient tool for in situ control of the growth process on stripe-patterned substrate templates. The comparison of the results obtained at different temperature reveals the importance of kinetics on the island formation process on patterned substrates.

Quantum dots; Silicon; Germanium; Molecular beam epitaxy; Patterned substrates; Reflection high-energy electron diffraction; Scanning tunneling microscopy