Figure 5.
Fabrication process of a nano-dot growth under As4 irradiation. a applying voltage, b Ga-rich site fabrication, c congregating In atoms in this site, and d exceeding critical thickness partially, forming an InAs dot
Toujyou and Tsukamoto Nanoscale Research Letters 2010 5:1930 doi:10.1007/s11671-010-9802-z |
