Figure 4.
STMBE images of a dot grown in a hole structure under In and As4 irradiations at 300°C and its line profiles. a Shows the hole structure, b and c were images after supplying additional 0.02 ML and 0.04 ML of InAs, respectively
Toujyou and Tsukamoto Nanoscale Research Letters 2010 5:1930 doi:10.1007/s11671-010-9802-z |
