Figure 4.

STMBE images of a dot grown in a hole structure under In and As4 irradiations at 300°C and its line profiles. a Shows the hole structure, b and c were images after supplying additional 0.02 ML and 0.04 ML of InAs, respectively

Toujyou and Tsukamoto Nanoscale Research Letters 2010 5:1930-1934   doi:10.1007/s11671-010-9802-z