Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal

A Urbańczyk*, GJ Hamhuis and R Nötzel

Author Affiliations

COBRA Research Institute on Communication Technology, Department of Applied Physics, Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands

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Nanoscale Research Letters 2010, 5:1926-1929  doi:10.1007/s11671-010-9785-9

Published: 28 September 2010


We report the observation of coupling of single InGaAs quantum dots with the surface plasmon resonance of a metal nanocrystal, which leads to clear enhancement of the photoluminescence in the spectral region of the surface plasmon resonance of the metal structures. Sharp emission lines, typical for single quantum dot emission, are observed, whereas for reference samples, only weak continuous background emission is visible. The composite metal–semiconductor structure is prepared by molecular beam epitaxy utilizing the principle of strain-driven adatom migration for the positioning of the metal nanocrystals with respect to the quantum dots without use of any additional processing steps.

Quantum dots; Surface plasmon resonance; InAs; Photoluminescence; In nanocrystals