Figure 3.

AFM gradient images of a patterned region following the deposition of 2.8 nm of Ge at 750°C. The growth rate was a 0.015 nm s−1 and b 0.1 nm s−1. In (a) the AR is 0.2 with a volume mean value of 7.118 × 10−3 μm3, while in (b) AR is ~0.11 with a volume of 1.380 × 10−3 μm3

Bollani et al. Nanoscale Research Letters 2010 5:1917-1920   doi:10.1007/s11671-010-9773-0