Table 1 |
|||||
| Summary of device performance | |||||
| Devices | ZnO seed layer thickness (nm) | Jsc (mA/cm2) | Voc (V) | FF (%) | PCE (%) |
| ZnO seed layer 12 times | 115 | 2.492 | 0.211 | 36.637 | 0.193 |
| ZnO seed layer 15 times | 130 | 3.250 | 0.220 | 36.212 | 0.259 |
| ZnO seed layer 18 times | 145 | 2.817 | 0.200 | 36.308 | 0.205 |
| ZnO NRs/ZnO seed layer 12 times | 250/115 | 8.900 | 0.259 | 35.955 | 0.829 |
| ZnO NRs/ZnO seed layer 15 times | 250/130 | 9.917 | 0.266 | 37.126 | 0.979 |
| ZnO NRs/ZnO seed layer 18 times | 250/145 | 9.100 | 0.269 | 37.971 | 0.930 |
Lee et al. Nanoscale Research Letters 2010 5:1908 doi:10.1186/1556-276X-5-1908