Open Access SPECIAL ISSUE ARTICLE

Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation

Tomoya Konishi* and Shiro Tsukamoto

Author Affiliations

Anan National College of Technology, Anan, Tokushima, 774-0017, Japan

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Nanoscale Research Letters 2010, 5:1901-1904  doi:10.1007/s11671-010-9754-3

Published: 24 August 2010

Abstract

Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM). Domains of (1 × 3)/(2 × 3) and (2 × 4) surface reconstructions were located in the STM image. The density of each surface reconstruction domain was comparable to that of subsequently nucleated QD precursors. The distribution of the domains was statistically investigated in terms of spatial point patterns. It was found that the domains were distributed in an ordered pattern rather than a random pattern. It implied the possibility that QD nucleation sites are related to the surface reconstruction domains.

Keywords:
InAs; Wetting layer; Quantum dot; Surface reconstruction; Spatial point pattern