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Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

C Somaschini1, S Bietti1, A Fedorov2, N Koguchi1 and S Sanguinetti1*

Author Affiliations

1 L-NESS and Dipartimento di Scienza dei Materiali, Universita’ di Milano Bicocca, Via Cozzi 53, 20125, Milan, Italy

2 CNISM, L-NESS and Dipartimento di Fisica, Politecnico di Milano, Via Anzani 42, 22100, Como, Italy

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Nanoscale Research Letters 2010, 5:1897-1900  doi:10.1007/s11671-010-9752-5

Published: 21 August 2010


We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.

Molecular beam epitaxy; Droplet epitaxy; GaAs nanostructures; Photoluminescence