Figure 4.

Tangential stress component above a misfit dislocation calculated for a CS-GaInP and b for TS-GaInP layers. The AFM cross-sections in (a) and (b) are measured along the lines in Fig. 3c and 3d, respectively

Hakkarainen et al. Nanoscale Research Letters 2010 5:1892-1896   doi:10.1007/s11671-010-9747-2