Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP
Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720, Tampere, Finland
Nanoscale Research Letters 2010, 5:1892-1896 doi:10.1007/s11671-010-9747-2Published: 20 August 2010
We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.