Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)
1 Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
2 CREST, Japan Science and Technology Agency, Tokyo, 107-0075, Japan
Nanoscale Research Letters 2010, 5:1888-1891 doi:10.1007/s11671-010-9731-xPublished: 14 August 2010
Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3)R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001) proceeds.