Figure 3.

Left: island volume analysis for the pyramid arrays of Fig. 1, corresponding to nominally 5-nm thick Si layers grown at aTg = 650°C and bTg = 750°C on Si(001). Emergent volume versus flooding plane height, Ve vs. c, computed through the 5 × 5 μm2 images of Fig. 1 (also shown in the insets). Marked on the plots axes are the nominal deposited volume, V0, (continuous line), same value in both plots; the total pyramids volume, Vpyr and the base plane height, c′, for each Tg (dashed lines). Right: 3D pictures generated from AFM topography images of the island arrays produced at each Tg, in order to highlight the trench formation phenomena. Note the different size of the two images: 1 × 1 μm2 for Tg = 650°C and 3 × 3 μm2 for Tg = 750°C

González-González et al. Nanoscale Research Letters 2010 5:1882-1887   doi:10.1007/s11671-010-9725-8