Figure 1.

AFM topography images (5 × 5 μm2) of Si pyramid-like arrays obtained growing nominally 5-nm thick Si layers on Si(001) substrates at different growth temperatures: aTg = 650°C and bTg = 750°C. The insets correspond to the respective self-correlation functions taken in sample regions of 2 × 2 μm2, revealing the quite regular order of both arrays

González-González et al. Nanoscale Research Letters 2010 5:1882-1887   doi:10.1007/s11671-010-9725-8