Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
Centre de Recherche sur l’Hétéroépitaxie et ses Applications CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560, Valbonne, France
Nanoscale Research Letters 2010, 5:1878-1881 doi:10.1007/s11671-010-9724-9Published: 2 September 2010
Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the  inclined direction. Thus, the coalescence boundaries stop the propagation of basal stacking faults. The faults filtering and the improvement of the crystalline quality were attested by transmission electron microscopy and low temperature photoluminescence. The temperature dependence of the luminescence polarization under normal incidence was also studied.