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Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell

A Di Bartolomeo1*, Y Yang2, MBM Rinzan2, AK Boyd2 and P Barbara2

Author Affiliations

1 Dipartimento di Fisica “E.R. Caianiello” and Centro Interdipartimentale di Ricerca NANOMATES, Università di Salerno, Fisciano (Sa), 84084, Italy

2 Physics Department, Georgetown University, Washington, DC, 20057-1228, USA

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Nanoscale Research Letters 2010, 5:1852-1855  doi:10.1007/s11671-010-9727-6

Published: 14 August 2010


We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO2/nanotube interface. We show that this type of memory device is robust, withstanding over 105 operating cycles, with a current drive capability up to 10−6 A at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum.

Carbon nanotube; Field-effect transistor; Memory; Hysteresis; Endurance; Data retention