Figure 6.

The PL spectrums of the SiNWs with different preparation parameters. a,b Correspond to the samples with HF treatment, c,d correspond to the samples with HNO3 treatment. (1)–(5) in a and c correspond to the SiNWs etched for 60 min with the H2O2 concentrations of 0.1, 0.2, 0.3, 0.4 and 0.5 M, respectively. (1)–(5) in b and d correspond to the SiNWs etched with 0.3 M H2O2 for 30, 60, 90, 120, and 180 min, respectively

Lin et al. Nanoscale Research Letters 2010 5:1822-1828   doi:10.1007/s11671-010-9719-6