Figure 1.

SEM and TEM images of the variable morphology of porous SiNWs etched with different H2O2 concentrations. ac 0.1 M H2O2, df 0.2 M H2O2, gi 0.3 M H2O2, jl 0.4 M H2O2, mo 0.5 M H2O2. The SAD pattern is shown in the inset (o)

Lin et al. Nanoscale Research Letters 2010 5:1822-1828   doi:10.1007/s11671-010-9719-6