Figure 1.

SEM and TEM images of the variable morphology of porous SiNWs etched with different H₂O₂ concentrations. a–c 0.1 M H₂O₂, d–f 0.2 M H₂O₂, g–i 0.3 M H₂O₂, j–l 0.4 M H₂O₂, m–o 0.5 M H₂O₂. The SAD pattern is shown in the inset (o)