Figure 4.

a Compensated I_DS—V_DS curves with positive substrate bias (V_SUB) of the device. The inset shows the substrate bias (V_SUB) applied for the purpose of keeping the operation of the device constant for temperatures from 25 to 150°C. (The dashed lines show the corresponding results obtained from the 2D numerical simulations.) b and c show the channel cross-sections of the simulated device, indicating the conduction current density contours for the compensated b’on state’ and c’off state’ with V_SUB = 15.1 V at T = 150°C