Figure 3.

a Measured (solid line) I_DS—V_DS curves for fabricated Si nanoribbon FETs. (The dashed lines show the corresponding results obtained from the 2D numerical simulations). b–e show the channel cross-sections of the device, indicating the conduction current density contours for the ‘on’ state b at room temperature and cT = 150°C with V_SUB = 0, and for the ‘off’ state d at room temperature and eT = 150°C with V_SUB = 0