Figure 2.

a Measured (solid line) IDSVGS curves for the fabricated Si nanoribbon FETs. (The dashed lines show the corresponding results obtained from the 2D numerical simulations). b The power law decay behavior of the normalized drain current and mobility as a function of temperature in the range from 25 to 150°C

Choi et al. Nanoscale Research Letters 2010 5:1795-1799   doi:10.1007/s11671-010-9714-y