High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors

Chang-Young Choi1, Ji-Hoon Lee1, Jung-Hyuk Koh1, Jae-Geun Ha1, Sang-Mo Koo1* and Sangsig Kim2

Author affiliations

1 College of Electronics and Information Engineering, Kwangwoon University, Seoul, 139-701, Korea

2 Department of Electrical Engineering, Korea University, Seoul, 136-701, Korea

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Citation and License

Nanoscale Research Letters 2010, 5:1795-1799  doi:10.1007/s11671-010-9714-y

Published: 3 August 2010


We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25–150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (−5.2 × 10−6).

Field-effect transistors (FETs); Electron mobility; Variation of the current level; Nanoribbon FET