Figure 4.

AFM image of indium-rich InGaN quantum dots (QDs) deposited on the InGaN wetting layer using overgrown GaN on a conventional GaN and b nano-ELO GaN template. c A single quantum well of sample C with clusters of InGaN nanostructures formed by layer growth of the InGaN well layer which wets the quantum dots. The RMS roughness is ~0.82 nm in the square box defined

Soh et al. Nanoscale Research Letters 2010 5:1788-1794   doi:10.1007/s11671-010-9712-0