Figure 2.

a Low temperature PL spectra of the InGaN/GaN multiple quantum wells at 10 K; MQWs A and B with structures on GaN and nano-ELO GaN template; MQWs C and D with indium-rich nanostructures incorporation in InGaN/GaN structures on GaN and nano-ELO GaN template. AFM plan view images of regrowth b strain relaxed GaN on nanopore SiO2 template c GaN on conventional GaN layer. (The arrows points to the pits generated on the layers)

Soh et al. Nanoscale Research Letters 2010 5:1788-1794   doi:10.1007/s11671-010-9712-0