Figure 1.

Cross-section and plane view SEM images of GaN undergoing anodization to generate nano-ELO GaN structures. a SEM image of the anodized alumina oxide on GaN coated with a SiO2 film b SEM image after FIB to expose the transfer of the self-ordered patterned site on SiO2 film with subsequent growth of GaN pillars from these nanopores on SiO2c re-growth of a thin buffer GaN on the nanopores SiO2 film d Lateral overgrowth to generate strain relaxed GaN template for subsequent growth of the multiple quantum wells and LEDs structures

Soh et al. Nanoscale Research Letters 2010 5:1788-1794   doi:10.1007/s11671-010-9712-0