Figure 2.

a A 1 × 1 μm2 AFM image showing the dewetting of the GaAs substrate by toluene. The dewetting layer is very thin as a result of high speed spin coating of toluene (8,000 rpm); b A 1 × 1 μm2 AFM image showing the assembly of MWCNT on the GaAs substrate. The distribution of the MWCNT resembles to that for the toluene shown in (a); c represents a 3D AFM image showing the assembly of MWCNT on the GaAs substrate

Al-Harthi et al. Nanoscale Research Letters 2010 5:1737-1743   doi:10.1007/s11671-010-9703-1