Figure 1.

Schematic illustration of fabrication process of PASiNP arrays: a creation of planar silicon p–n junction wafer via a standard phosphorus (POCl3) doping process at 930°C; b self-assembly of PS spheres on silicon wafer; c reduction in the diameter of PS spheres by a RIE process; d deposition of silver film; e fabrication of PASiNP arrays in the mixture solution of HF and H2O2; and f removal of residual PS spheres and silver particles

Li et al. Nanoscale Research Letters 2010 5:1721-1726   doi:10.1007/s11671-010-9701-3