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Periodically Aligned Si Nanopillar Arrays as Efficient Antireflection Layers for Solar Cell Applications

Xiaocheng Li*, Junshuai Li, Ting Chen, BengKang Tay, Jianxiong Wang and Hongyu Yu

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School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore

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Citation and License

Nanoscale Research Letters 2010, 5:1721-1726  doi:10.1007/s11671-010-9701-3

Published: 28 July 2010


Periodically aligned Si nanopillar (PASiNP) arrays were fabricated on Si substrate via a silver-catalyzed chemical etching process using the diameter-reduced polystyrene spheres as mask. The typical sub-wavelength structure of PASiNP arrays had excellent antireflection property with a low reflection loss of 2.84% for incident light within the wavelength range of 200–1,000 nm. The solar cell incorporated with the PASiNP arrays exhibited a power conversion efficiency (PCE) of ~9.24% with a short circuit current density (JSC) of ~29.5 mA/cm2 without using any extra surface passivation technique. The high PCE of PASiNP array-based solar cell was attributed to the excellent antireflection property of the special periodical Si nanostructure.

Si nanopillar arrays; Antireflection; Periodicity; Solar cell; Chemical etching