Periodically Aligned Si Nanopillar Arrays as Efficient Antireflection Layers for Solar Cell Applications
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
Nanoscale Research Letters 2010, 5:1721-1726 doi:10.1007/s11671-010-9701-3Published: 28 July 2010
Periodically aligned Si nanopillar (PASiNP) arrays were fabricated on Si substrate via a silver-catalyzed chemical etching process using the diameter-reduced polystyrene spheres as mask. The typical sub-wavelength structure of PASiNP arrays had excellent antireflection property with a low reflection loss of 2.84% for incident light within the wavelength range of 200–1,000 nm. The solar cell incorporated with the PASiNP arrays exhibited a power conversion efficiency (PCE) of ~9.24% with a short circuit current density (JSC) of ~29.5 mA/cm2 without using any extra surface passivation technique. The high PCE of PASiNP array-based solar cell was attributed to the excellent antireflection property of the special periodical Si nanostructure.