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Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

S Bietti1, C Somaschini1, E Sarti1, N Koguchi1, S Sanguinetti1*, G Isella2, D Chrastina2 and A Fedorov2

Author Affiliations

1 L-NESS and Dipartimento di Scienza dei Materiali, Via Cozzi 53, 20125, Milano, Italy

2 CNISM, L-NESS and Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100, Como, Italy

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Nanoscale Research Letters 2010, 5:1650-1653  doi:10.1007/s11671-010-9689-8

Published: 18 July 2010


We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.

Quantum nanostructures; III–V semiconductors; Si integration; Photoluminescence