Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
1 L-NESS and Dipartimento di Scienza dei Materiali, Via Cozzi 53, 20125, Milano, Italy
2 CNISM, L-NESS and Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100, Como, Italy
Nanoscale Research Letters 2010, 5:1650-1653 doi:10.1007/s11671-010-9689-8Published: 18 July 2010
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.