Figure 4.

Normalized wave function profiles (a.u.) for various values λD/L as marked and for: aVo = 0.25 eVbVo = 2.05 eV. Transition from edge-trapping to full QW occupation occurs at shorter λD (higher carrier density) for higher polarization voltage

Riyopoulos Nanoscale Research Letters 2009 4:993-1003   doi:10.1007/s11671-009-9347-1