Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In2S3Nanowires
1 Department of Electronic Engineering, Feng Chia University, Taichung, 40724, Taiwan
2 The Graduate Institute of Electrical and Communications Engineering, Feng Chia University, 100, Wen-Hwa Rd, Seatwen, Taichung, 40724, Taiwan
Nanoscale Research Letters 2009, 4:1059-1063 doi:10.1007/s11671-009-9357-zPublished: 6 June 2009
In this study, β-In2S3nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO membrane. As FE-SEM results, β-In2S3nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used. The diameter of the β-In2S3nanowires is about 60 nm with the length of about 6–8 μm. Moreover, the aspect ratio of β-In2S3nanowires is up to 117. An EDS analysis revealed the β-In2S3nanowires with an atomic ratio of nearly S/In = 1.5. X-ray diffraction and corresponding selected area electron diffraction patterns demonstrated that the β-In2S3nanowire is tetragonal polycrystalline. The direct band gap energy (Eg) is 2.40 eV from the optical measurement, and it is reasonable with literature.