Magnetoresistance in Sn-Doped In2O3Nanowires
1 Departamento de Física, Universidade Federal de São Carlos, CEP 13565-905, CP 676, São Carlos, São Paulo, Brazil
2 Centro de Engenharia, Modelagem e Ciências Sociais Aplicadas, Universidade Federal do ABC, CEP 09210-170, Santo André, São Paulo, Brazil
3 Laboratório Interdisciplinar de Eletroquímica e Cerâmicas, Departamento de Química, Universidade Federal de São Carlos, CEP 13565-905, CP 676, São Carlos, São Paulo, Brazil
Citation and License
Nanoscale Research Letters 2009, 4:921-925 doi:10.1007/s11671-009-9336-4Published: 4 July 2009
In this work, we present transport measurements of individual Sn-doped In2O3nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.